UPA2815T1S mosfef equivalent, p-channel mosfef.
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 11 mΩ MAX. (VGS = −10 V, ID = −21 A)
* 4.5 V Gate-drive available
* Small & thin type sur.
of portable equipment. R07DS0777EJ0101 Rev.1.01 May 28, 2013
Features
* VDSS = −30 V (TA = 25°C)
* Low on-state.
The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0777EJ0101 Rev.1.01 May 28, 2013
Features
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance.
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