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UPD5741T6J - LOW NOISE AND HIGH GAIN AMPLIFIER

Description

electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is 3-pin thin-type lead-less minimold, suitable for surface mount.

Features

  • Low Noise : NV =.
  • 101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
  • 102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
  • High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ.
  • Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ.
  • Built-in the capacitor for RF noise immunity.
  • High ESD voltage.
  • 3-pin thin-type lead-less minimol.

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Datasheet preview – UPD5741T6J

Datasheet Details

Part number UPD5741T6J
Manufacturer Renesas Electronics
File Size 115.77 KB
Description LOW NOISE AND HIGH GAIN AMPLIFIER
Datasheet download datasheet UPD5741T6J Datasheet
Additional preview pages of the UPD5741T6J datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS ANALOG INTEGRATED CIRCUIT μPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is 3-pin thin-type lead-less minimold, suitable for surface mount. FEATURES • Low Noise : NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.
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