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UPD5750T7D - SiGe BiCMOS

General Description

The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.

This IC exhibits low noise figure and high power gain characteristics.

Key Features

  • Low voltage operation.
  • Low mode control voltage.
  • Low current consumption.
  • : VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet μPD5750T7D SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This IC exhibits low noise figure and high power gain characteristics. The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the high reception sensitivity and low power consumption. The package is a 6-pin WLBGA (Wafer Level Ball Grid Array) (T7D) suitable for surface mount. This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.