UPD5750T7D - SiGe BiCMOS

Product Overview

Renesas

Datasheet Details

Part number	UPD5750T7D
Manufacturer	Renesas
File Size	319.30 KB
Description	SiGe BiCMOS
Datasheet	UPD5750T7D Datasheet
Additional preview pages of the UPD5750T7D datasheet.

Product details

Description

R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.This IC exhibits low noise figure and high power gain characteristics.The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the high reception sensitivity and low power consumption.The package is a 6-pin WLBGA (Wafer Level Ball Grid Arra

Features

Low voltage operation.
Low mode control voltage.
Low current consumption.
: VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5.

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Published: Nov 10, 2013 |