Datasheet4U Logo Datasheet4U.com

UPD5750T7D Datasheet Sige Bicmos

Manufacturer: Renesas

Overview: Data Sheet μPD5750T7D SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through.

General Description

R09DS0009EJ0100 Rev.1.00 Feb 24, 2011 The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.

This IC exhibits low noise figure and high power gain characteristics.

The μPD5750T7D has an LNA pass-through function (bypass function) to prevent the degradation of the received signal quality at the strong electric field, and achieve the high reception sensitivity and low power consumption.

Key Features

  • Low voltage operation.
  • Low mode control voltage.
  • Low current consumption.
  • : VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5.

More Datasheets from Renesas

Part Number Description
UPD5753T7G SiGe BiCMOS
UPD5754T7A SiGe BiCMOS
UPD5756T6N SiGe BiCMOS
UPD5758T6J Low Noise and High Gain Amplifier
UPD5759T6J Low Noise and High Gain Amplifier
UPD5713TK WIDE BAND SPDT SWITCH
UPD5739T7A SiGe CMOS
UPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER
UPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER
UPD5201 Quad SPST CMOS analog switch

UPD5750T7D Distributor