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UPD5759T6J Datasheet Low Noise And High Gain Amplifier

Manufacturer: Renesas

Overview: Preliminary Data Sheet μPD5759T6J Low Noise and High Gain Amplifier IC for Impedance Converter of.

Datasheet Details

Part number UPD5759T6J
Manufacturer Renesas
File Size 216.59 KB
Description Low Noise and High Gain Amplifier
Datasheet UPD5759T6J_Renesas.pdf

General Description

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.

Key Features

  • Low noise.
  • : NV =.
  • 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV =.
  • 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ High-density surface.

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