• Part: UPD5759T6J
  • Description: Low Noise and High Gain Amplifier
  • Manufacturer: Renesas
  • Size: 216.59 KB
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Datasheet Summary

Preliminary Data Sheet μPD5759T6J Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting. Features - Low noise - - - - - - : NV = - 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = - 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0...