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UPD5756T6N - SiGe BiCMOS

General Description

The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application.

This IC exhibits low noise figure and low distortion characteristics.

Key Features

  • Low voltage operation.
  • Low current consumption.
  • : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP. ) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode) ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode) f = 40 to 1 000 MHz NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode) IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode) Lins = 1.7 dB TYP. @f = 1 000 MHz (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet μPD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure and low distortion characteristics. This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics. FEATURES • Low voltage operation • Low current consumption • • • • • : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP.) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode) ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode) f = 40 to 1 000 MHz NF = 3.2 dB TYP.