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uPA2757GR - SWITCHING N-CHANNEL POWER MOS FET

General Description

The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application.

Key Features

  • Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A).
  • Low gate charge QG = 10 nC TYP. (VGS = 10 V).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8).

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Datasheet Details

Part number uPA2757GR
Manufacturer Renesas
File Size 309.63 KB
Description SWITCHING N-CHANNEL POWER MOS FET
Datasheet download datasheet uPA2757GR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2757GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) • Low gate charge QG = 10 nC TYP. (VGS = 10 V) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit: mm) 85 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 14 5.37 MAX. 6.0 ± 0.3 4.4 0.8 +0.10 –0.05 0.15 1.27 0.78 MAX. 0.5 ± 0.2 0.10 1.8 MAX. 0.05 MIN. 1.44 ORDERING INFORMATION 0.40 +0.10 –0.05 0.