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uPA831TF - NPN SILICON EPITAXIAL TRANSISTOR

General Description

c and Q2) for low noise amplification in the VHF band to UHF u band.

Key Features

  • Low noise o Q1 : NF = 1.2 dB TYP. , Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • 6-pin thin-type small mini mold package d.
  • 2 different transistors on-chip (2SC4226, 2SC4227) e ON-CHIP.

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Datasheet Details

Part number uPA831TF
Manufacturer Renesas
File Size 127.25 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet uPA831TF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET Silicon Transistor µPA831TF 0.22−+00..015 0 to 0.1 0.13±0.05 NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE 56 21 2.00±0.2 1.30 0.65 0.65 V24 t DESCRIPTION The µPA831TF has two different built-in transistors (Q1 c and Q2) for low noise amplification in the VHF band to UHF u band. d FEATURES • Low noise o Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. r @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain P Q1 : |S21e|2 = 9.0 dB TYP. Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • 6-pin thin-type small mini mold package d • 2 different transistors on-chip (2SC4226, 2SC4227) e ON-CHIP TRANSISTORS 4 3 0.60±0.1 0.45 inu 3-pin small mini mold part No.