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uPD46184185B - 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION

This page provides the datasheet information for the uPD46184185B, a member of the uPD46184095B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION family.

Description

The μPD46184095B is a 2,097,152-word by 9-bit and the μPD46184185B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

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Datasheet Details

Part number uPD46184185B
Manufacturer Renesas Electronics
File Size 546.72 KB
Description 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
Datasheet download datasheet uPD46184185B Datasheet
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Full PDF Text Transcription

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μPD46184095B μPD46184185B Datasheet 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description R10DS0115EJ0200 Rev.2.00 Nov 09, 2012 The μPD46184095B is a 2,097,152-word by 9-bit and the μPD46184185B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46184095B and μPD46184185B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features • 1.
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