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uPD46184184B - 18M-BIT DDR II SRAM 4-WORD BURST OPERATION

General Description

The μPD46184184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The μPD46184184B integrate unique synchronous peripheral circuitry and a burst counter.

Key Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

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Datasheet Details

Part number uPD46184184B
Manufacturer Renesas
File Size 516.08 KB
Description 18M-BIT DDR II SRAM 4-WORD BURST OPERATION
Datasheet download datasheet uPD46184184B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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μPD46184184B Datasheet 18M-BIT DDR II SRAM 4-WORD BURST OPERATION R10DS0120EJ0200 Rev.2.00 Nov 09, 2012 Description The μPD46184184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46184184B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features • 1.8 ± 0.