Datasheet Summary
μPD46184184B
18M-BIT DDR II SRAM 4-WORD BURST OPERATION
R10DS0120EJ0200 Rev.2.00
Nov 09, 2012
Description
The μPD46184184B is a 1,048,576-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The μPD46184184B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC...