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2SK2595 - Silicon N-Channel MOSFET

Features

  • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz).
  • Compact package capable of surface mounting Outline RP8P D G 1 3 2 S 1. Gate 2. Source 3. Drain Note: Marking is "AX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel t.

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www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz) • Compact package capable of surface mounting Outline RP8P D G 1 3 2 S 1. Gate 2. Source 3. Drain Note: Marking is "AX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 PchNote2 Tch Tstg Ratings 17 ±10 1.
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