Datasheet Summary
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Silicon N-Channel MOS FET UHF Power Amplifier
1st. Edition Features
- High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
- pact package capable of surface mounting
Outline
This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is...
