2SK2595 Overview
2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st.
2SK2595 Key Features
- High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
- pact package capable of surface mounting
Datasheet Details
| Part number | 2SK2595 |
|---|---|
| Datasheet | 2SK2595_HitachiSemiconductor.pdf |
| File Size | 68.76 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel MOSFET |
|
|
