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2SK2595 Datasheet Silicon N-Channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st.

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Key Features

  • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz).
  • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2595 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle.

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Brand Logo Part Number Description Manufacturer
Renesas Technology Logo 2SK2595 Silicon N-Channel MOSFET Renesas Technology

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