2SK2595 - Silicon N-Channel MOSFET

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Renesas Technology

Part number	2SK2595
Manufacturer	Renesas Technology
File Size	318.33 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2595 Datasheet
Additional preview pages of the 2SK2595 datasheet.

High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz).
Compact package capable of surface mounting Outline RP8P D G 1 3 2 S 1. Gate 2. Source 3. Drain Note: Marking is "AX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel t.

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Published: Oct 18, 2006 |