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2SK2596
Silicon N-Channel MOS FET UHF Power Amplifier
Features
• High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. (f = 836.5 MHz)
• Compact package capable of surface mounting
REJ03G0207-0400 Rev.4.00
Nov 08, 2007
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
3 1
1 2 3
4 2, 4
Note: Marking is “BX”.
1. Gate 2. Source 3. Drain 4. Source
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol VDSS VGSS ID ID(pulse) Note1 Pch Note2 Tch Tstg
Ratings 17 ±10 0.
2SK2596 Datasheet
