2SK2596
Key Features
- High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. (f = 836.5 MHz)
- Compact package capable of surface mounting
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK2593 | Panasonic | Silicon N-Channel MOSFET |
| 2SK2595 | Hitachi Semiconductor | Silicon N-Channel MOSFET |
| K2599 | Toshiba | 2SK2599 |
| 2SK2590 | Hitachi Semiconductor | Silicon N-Channel MOSFET |
| 2SK2599 | Toshiba | Silicon N-Channel MOSFET |
| 2SK2598 | Toshiba | Silicon N-Channel MOSFET |
| 2SK2597 | NEC | N-Channel MOSFET |
| 2SK2590 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| 2SK2590 | Renesas | Silicon N-Channel MOSFET |
| 2SK259 | Inchange Semiconductor | N-Channel MOSFET Transistor |