Overview: Silicon Junction FETs (Small Signal) 2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification For switching
0.4 unit: mm
1.6±0.15 0.8±0.1 0.4 q Low noies, high gain q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 125 125 −55 to +125 Unit V V V mA mA mW °C °C 1: Source 2: Drain 3: Gate EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol (Example): 2B s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS* IGSS VGDS VGSC | Yfs | Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz 2.5 7.5 6.5 1.9 2.5 55 80 −5 min 1 typ max 20 10 Unit mA nA V V mS pF pF dB Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF * IDSS rank classification Runk IDSS (mA) P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR S 10 to 20 2BS Marking Symbol 0 to 0.1 0.2±0.1 0.15–0.05 +0.1 0.2–0.05 +0.
