2SK2593 - Silicon N-Channel MOSFET

Panasonic

Key Features

1 Silicon Junction FETs (Small Signal) PD  Ta 150 5 Ta=25˚C 125 2SK2593 ID  VDS 10 Ta=25˚C ID  VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 100 Drain current ID (mA) VGS=0V 3 VGS=0.
0.2V 6.
0.2V 75.
0.4V 4.
0.6V 2.
0.8V.
1.0V 2.
0.4V.
0.6V 50 25 1.
0.8V.
1.0V.
1.2V 0 6 0 2 4 6 8 10 12 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 Ambient temperatur.

2SK2593 silicon n-channel mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK2593
Manufacturer	Panasonic
File Size	33.17 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2593 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low noies, high gain q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.