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2SK3000
Silicon N Channel MOS FET Low Frequency Power Switching
REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004
Features
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• Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability
Outline
MPAK
D 3
3
2 G
1
1
1. Source 2. Gate 3. Drain
2
S
Note: Marking is “ZY–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °C
Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % t 2.
2SK3000 Datasheet
