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2SK4150 - N-Channel MOSFET

Description

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Features

  • Capable of 2.5 V gate drive.
  • Low drive current.
  • Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May 27, 2010 Outline.

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Datasheet Details

Part number 2SK4150
Manufacturer Renesas Electronics
File Size 108.89 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK4150 Datasheet
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Preliminary www.DataSheet4U.com Datasheet 2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) REJ03G1909-0300 Rev.3.00 May 27, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 3 2 1. Source 2. Drain 3. Gate 1 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1.
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