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BB504C Datasheet

Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

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BB504C
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
REJ03G0836-0600
(Previous ADE-208-983D)
Rev.6.00
Aug.10.2005
Features
Built in Biasing Circuit; To reduce using parts cost & PC board space.
www.DataSheet4U.cLoomw noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
Notes:
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Marking is “DS–”.
2. BB504C is individual type number of RENESAS BBFET.
1. Source
2. Gate1
3. Gate2
4. Drain
Rev.6.00 Aug 10, 2005 page 1 of 9


Renesas Electronics Components Datasheet

BB504C Datasheet

Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

No Preview Available !

BB504C
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
www.DataSheet4U.com
Electrical Characteristics
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain (1)
Noise figure (1)
Power gain (2)
Noise figure (2)
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
6
+6
+6
0.6
VG2S(off)
0.6
ID(op)
13
|yfs| 24
Ciss
Coss
Crss
PG
NF
1.7
1.0
25
PG 17
NF —
Ratings
6
+6
–0
+6
–0
30
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Typ Max
——
——
——
— +100
— +100
0.85 1.1
0.85 1.1
16 19
29 34
2.1
1.4
0.027
30
1.0
2.5
1.8
0.05
1.8
22 —
1.75 2.3
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
dB
dB
(Ta = 25°C)
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = +10 µA, VG1S = VDS = 0
VG1S = +5 V, VG2S = VDS = 0
VG2S = +5 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4V
ID = 100µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 k
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 120 k, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 k
f = 1 MHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 k
f = 200 MHz
VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 120 k
f = 900 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9


Part Number BB504C
Description Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Maker Renesas Technology
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BB504C Datasheet PDF






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