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BB504C Datasheet Built In Biasing Circuit Mos Fet Ic Vhf&uhf Rf Amplifier

Manufacturer: Renesas

Overview: BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 (Previous ADE-208-983D) Rev.6.00 Aug.10.

Key Features

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  • Low.
  • Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz.
  • High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz.
  • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline.

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