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BB504C - Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

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Hitachi Semiconductor

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BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – BB504C

Datasheet Details

Part number	BB504C
Manufacturer	Hitachi Semiconductor
File Size	107.35 KB
Description	Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Datasheet	BB504C Datasheet
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Features

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Build in Biasing.
Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate.

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Published: Nov 19, 2008 |