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BB504C Datasheet Build In Biasing Circuit Mos Fet Ic Vhf&uhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D (Z) 5th. Edition Dec.

BB504C datasheet preview

Datasheet Details

Part number	BB504C
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	107.35 KB
Description	Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Datasheet	BB504C_HitachiSemiconductor.pdf

Key Features

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Build in Biasing.
Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	BB504C	Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier	Renesas Technology

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