Part BB504C
Description Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Manufacturer Hitachi Semiconductor
Size 107.35 KB
Hitachi Semiconductor
BB504C

Overview

  • Build in Biasing * * *
  • Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4
  • Source
  • Gate1
  • Gate2
  • Drain Notes: 1.
  • Marking is “DS-”. BB504C is individual type number of HITACHI BBFET. BB504C