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BB501 Datasheet

Manufacturer: Hitachi Semiconductor (now Renesas)

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Datasheet Details

Part number	BB501
Datasheet	BB501_HitachiSemiconductor.pdf
File Size	71.00 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501 Overview

BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th.

BB501 Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space
High gain; PG = 21.5 dB typ. at f = 900 MHz
Low noise; NF = 1.85 dB typ. at f = 900 MHz
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions
Provide mini mold packages; CMPAK-4(SOT-343mod)

More Datasheets from Hitachi Semiconductor (now Renesas)

See all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
BB501	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB501C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB501M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB502M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB503	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB503	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB503C	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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