BB501 Datasheet PDF - Hitachi Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Specs

BB501 - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Datasheet Summary

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain; PG = 21.5 dB typ. at f = 900 MHz.
Low noise; NF = 1.85 dB typ. at f = 900 MHz.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS.
”. 2. BB501C is individual type number of HI.

Datasheet Details

Part number	BB501
Manufacturer	Hitachi
File Size	71.00 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB501 Datasheet
Additional preview pages of the BB501 datasheet.

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Full PDF Text Transcription

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BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS–”. 2. BB501C is individual type number of HITACHI BBFET.

Published: Jun 3, 2005 |