BB501C Description
BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C (Z) 4th.
BB501C Key Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space
- High gain; PG = 21.5 dB typ. at f = 900 MHz
- Low noise; NF = 1.85 dB typ. at f = 900 MHz
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions
- Provide mini mold packages; CMPAK-4(SOT-343mod)