BB501M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Product Overview

Hitachi

Part number	BB501M
Manufacturer	Hitachi
File Size	71.05 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB501M Datasheet
Additional preview pages of the BB501M datasheet.

Build in Biasing Circuit; To reduce using parts cost & PC board space.
High gain; PG = 21.5 dB typ. at f = 900 MHz.
Low noise; NF = 1.85 dB typ. at f = 900 MHz.
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS.
”. 2. BB501M is individual type number of HITA.

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Published: Jun 3, 2005 |