• Part: BB501M
  • Description: Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
  • Manufacturer: Hitachi Semiconductor
  • Size: 71.05 KB
Download BB501M Datasheet PDF
Hitachi Semiconductor
BB501M
BB501M is Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier manufactured by Hitachi Semiconductor.
Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th. Edition Nov. 1998 Features - Build in Biasing Circuit; To reduce using parts cost & PC board space. - High gain; PG = 21.5 dB typ. at f = 900 MHz - Low noise; NF = 1.85 dB typ. at f = 900 MHz - Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. - Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS- ”. 2. BB501M is individual type number of HITACHI...