Hitachi BB501M
BB501M is individual type number of HITACHI BBFET.| Part No. | BB501M |
|---|---|
| Datasheet | BB501M Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Build in Biasing Circuit; To reduce using parts cost & PC board space.● High gain; PG = 21.5 dB typ. at f = 900 MHz
● Low noise; NF = 1.85 dB typ. at f = 900 MHz
● Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
● Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS–”. 2. BB501M
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 20 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.5 0.5 7 19 Typ — — — — — 0.7 0.7 10 24 Max — — — +100 +100 1.0 1.0 13 29 Unit...
