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BB501M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th. Edition Nov.

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain; PG = 21.5 dB typ. at f = 900 MHz.
  • Low noise; NF = 1.85 dB typ. at f = 900 MHz.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AS.
  • ”. 2. BB501M is individual type number of HITA.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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BB501M Distributor