• Part: BB502M
  • Description: Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
  • Manufacturer: Hitachi Semiconductor
  • Size: 65.02 KB
Download BB502M Datasheet PDF
Hitachi Semiconductor
BB502M
BB502M is Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier manufactured by Hitachi Semiconductor.
Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B(Z) 3rd. Edition Jun. 1999 Features - - - - Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. - Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “BS- ”. BB502M is individual type number of HITACHI...