BB502M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Product Overview

Hitachi

Part number	BB502M
Manufacturer	Hitachi
File Size	65.02 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB502M Datasheet
Additional preview pages of the BB502M datasheet.

Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “BS.
”. BB502M is individual type number of HITAC.

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Published: Jun 3, 2005 |