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Renesas Electronics Components Datasheet

BCR10LM-12LB Datasheet

Triac

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BCR10LM-12LB
Triac
Medium Power Use
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III: 30 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0064EJ0100
Rev.1.00
Jul 27, 2010
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized : File No. E223904
1
23
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,
Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,
electric tool, electric heater control, and other general purpose control applications
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
www.DataSheet.in
Page 1 of 7


Renesas Electronics Components Datasheet

BCR10LM-12LB Datasheet

Triac

No Preview Available !

BCR10LM-12LB
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
10
100
41.6
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
C
C
g
V
Preliminary
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 103C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state
current
Symbol
IDRM
Min.
Typ.
Max.
2.0
Unit
mA
Test conditions
Tj = 150C, VDRM applied
On-state voltage
VTM — — 1.5 V Tc = 25C, ITM = 15 A,
instantaneous measurement
Gate trigger voltageNote2 VFGT
1.5
V Tj = 25C, VD = 6 V, RL = 6 ,
 VRGT
1.5
V RG = 330
 VRGT
1.5
V
Gate trigger curentNote2 IFGT— — 30 mA Tj = 25C, VD = 6 V, RL = 6 ,
 IRGT— — 30 mA RG = 330
 IRGT
30 mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
10/1
— V Tj = 125C/150C, VD = 1/2 VDRM
4.1 C/W Junction to caseNote3
— V/s Tj = 125C/150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
www.DataSheet.in
Page 2 of 7


Part Number BCR10LM-12LB
Description Triac
Maker Renesas Technology
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