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Renesas Electronics Components Datasheet

BCR8PM-14L Datasheet

Triac

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BCR8PM-14L
Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 700 V
www.DataSheet4U.cIFoGmTI, IRGTI, IRGT: 30 mA (20 mA)Note5
Viso : 2000 V
Outline
TO-220F
12 3
REJ03G0308-0100
Rev.1.00
Aug.20.2004
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
700
840
Unit
V
V
Rev.1.00, Aug.20.2004, page 1 of 7


Renesas Electronics Components Datasheet

BCR8PM-14L Datasheet

Triac

No Preview Available !

BCR8PM-14L
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
www.DataSheeMt4Uas.csom
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 88°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
— — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage
VTM — — 1.6 V Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι VFGTΙ
— 1.5
V Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ VRGTΙ — — 1.5 V RG = 330
ΙΙΙ VRGTΙΙΙ — — 1.5 V
Gate trigger currentNote2 Ι IFGTΙ
30Note5
mA Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ IRGTΙ
30Note5
mA RG = 330
ΙΙΙ IRGTΙΙΙ
30Note5
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.2 —
V Tj = 125°C, VD = 1/2 VDRM
Rth (j-c) — — 3.7 °C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
10
— V/µs Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.1.00, Aug.20.2004, page 2 of 7


Part Number BCR8PM-14L
Description Triac
Maker Renesas Technology
PDF Download

BCR8PM-14L Datasheet PDF






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