900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

BCR8PM-14LE Datasheet

Triac

No Preview Available !

BCR8PM-14LE
700V – 8A - Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 700 V
IFGTI, IRGTI, IRGTIII : 30 mA
Viso : 1500 V
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
Preliminary Datasheet
R07DS1241EJ0300
(Previous: REJ03G1260-0200)
Rev.3.00
Dec 24, 2014
Insulated Type
Planar Passivation Type
UL Applying
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
14
700
800
Unit
V
V
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 1 of 7


Renesas Electronics Components Datasheet

BCR8PM-14LE Datasheet

Triac

No Preview Available !

BCR8PM-14LE
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
1500
Preliminary
Unit
Conditions
A Commercial frequency, sine full wave
360° conduction, Tc = 82°C
A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
Ι
VFGTΙ
ΙΙ
VRGTΙ
ΙΙΙ
VRGTΙΙΙ
Gate trigger currentNote2
Ι
IFGTΙ
ΙΙ
IRGTΙ
ΙΙΙ
IRGTΙΙΙ
2.0
mA Tj = 125°C, VDRM applied
1.6
V
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
1.5
V
RG = 330 Ω
1.5
V
30
mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
30
mA RG = 330 Ω
30
mA
Gate non-trigger voltage
VGD
0.2
V
Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
4.3
°C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
10
V/μs Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1241EJ0300 Rev.3.00
Dec 24, 2014
Page 2 of 7


Part Number BCR8PM-14LE
Description Triac
Maker Renesas Technology
PDF Download

BCR8PM-14LE Datasheet PDF






Similar Datasheet

1 BCR8PM-14L Triac
Renesas Technology
2 BCR8PM-14L Thyristor
INCHANGE
3 BCR8PM-14LD Triac
Renesas Technology
4 BCR8PM-14LE Triac
Renesas Technology
5 BCR8PM-14LG Triac
Renesas Technology
6 BCR8PM-14LG Thyristor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy