H5N2505DS
H5N2505DS is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
- Part of the H5N2505DL comparator family.
- Part of the H5N2505DL comparator family.
Features
- Low on-resistance
- Low drive current ..
- High speed switching
- Low gate change
- Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) )
G 1 2
3 S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 250 ±30 5 20 5 20 5 25 5 150
- 55 to +150 Unit V V A A A A A W °C/W °C °C
Rev.3.00 Oct 16, 2006 page 1 of 7
H5N2505DL, H5N2505DS
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge .. Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IDSS IGSS VGS (off) |yfs| RDS (on) Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Qrr Min 250
- - 3.0 2.0
- -
- -
- -
- -
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- -
- - Typ
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- - 3.3 0.68 300 42 11 11 2 5 18 18 44 11 1.0 100 0.32 Max
- 1 ±0.1 4.5
- 0.89
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