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H5N2505DL, H5N2505DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1107-0300 Rev.3.00 Oct 16, 2006
Features
• Low on-resistance • Low drive current www.DataSheet4U.com • High speed switching • Low gate change • Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) )
G 1 2
3 S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
H5N2505DL Datasheet
