H5N2507P - High Speed Power Switching MOSFET

Product Overview

Renesas Technology

Datasheet Details

Part number	H5N2507P
Manufacturer	Renesas Technology
File Size	120.73 KB
Description	High Speed Power Switching MOSFET
Datasheet	H5N2507P Datasheet
Additional preview pages of the H5N2507P datasheet.

H5N2507P Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C).
Low leakage current.
High speed switching.
Low gate charge.
Built-in fast recovery diode Outline.

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Published: Oct 20, 2015 |