H5N2507P Key Features
- Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
- Low gate charge
- Built-in fast recovery diode
- Part: H5N2507P
- Description: High Speed Power Switching MOSFET
- Manufacturer: Renesas
- Size: 120.73 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| H5N2501LD | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2501LM | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2501LS | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2502CF | Silicon N Channel MOS FET High Speed Power Switching |
| H5N2503P | Silicon N Channel MOS FET High Speed Power Switching |