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H5N2507P Datasheet High Speed Power Switching MOSFET

Manufacturer: Renesas

Overview: H5N2507P 250V - 50A - MOS FET High Speed Power Switching.

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Key Features

  • Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching.
  • Low gate charge.
  • Built-in fast recovery diode Outline.

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