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H5N2509P Datasheet Silicon N-channel MOSFET

Manufacturer: Renesas

Overview: H5N2509P Silicon N Channel MOS FET High Speed Power Switching.

H5N2509P datasheet preview

Datasheet Details

Part number	H5N2509P
Manufacturer	Renesas
File Size	77.49 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N2509P-Renesas.pdf

Key Features

Low on-resistance: R DS (on) = 0.053 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V).
High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V).
Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A).
Avalanche ratings Outline.

Similar Datasheet

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	H5N2509P	Silicon N-Channel MOSFET	Hitachi

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