H5N2509P Datasheet | Renesas

Silicon N Channel MOS FET High Speed Power Switching Features - Low on-resistance: R DS (on) = 0.053 Ω typ. - Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) - High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) - Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) - Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G1109-0200 (Previous: ADE-208-1378) Rev.2.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.2.00 Sep 07, 2005 page 1 of...