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H5N2509P - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance : RDS(on) = 0.053 Ω typ.
  • Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V).
  • High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V).
  • Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A).
  • Avalanche ratings Outline TO.
  • 3P D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2509P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Ga.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance : RDS(on) = 0.053 Ω typ. • Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) • Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) • Avalanche ratings Outline TO–3P D G S 1 2 3 1. Gate 2. Drain (Flange) 3.