H5N2509P Datasheet | Hitachi Semiconductor

Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features - Low on-resistance : RDS(on) = 0.053 Ω typ. - Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) - High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) - Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) - Avalanche ratings Outline TO- 3P 1 2 3 1. Gate 2. Drain (Flange) 3....