H5N2509P Description
H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st.
H5N2509P Key Features
- Low on-resistance : RDS(on) = 0.053 Ω typ
- Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
- High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
- Low gate charge
- Avalanche ratings