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H5N2509P Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar.

H5N2509P datasheet preview

Datasheet Details

Part number	H5N2509P
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	56.25 KB
Description	Silicon N-Channel MOSFET
Datasheet	H5N2509P-Hitachi.pdf

Key Features

Low on-resistance : RDS(on) = 0.053 Ω typ.
Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V).
High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V).
Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A).
Avalanche ratings Outline TO.
3P D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2509P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Ga.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	H5N2509P	Silicon N-Channel MOSFET	Renesas

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