Datasheet4U Logo Datasheet4U.com

H5N2508DS - Silicon N Channel MOS FET High Speed Power Switching

Download the H5N2508DS datasheet PDF. This datasheet also covers the H5N2508DL variant, as both devices belong to the same silicon n channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • www. DataSheet4U. com.
  • Low.
  • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
  • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A).
  • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A).
  • Avalanche ratings Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H5N2508DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H5N2508DS
Manufacturer Renesas
File Size 126.34 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2508DS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.