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H5N2508DL Datasheet Silicon N Channel MOS FET High Speed Power Switching

Manufacturer: Renesas

Overview: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.

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Datasheet Details

Part number H5N2508DL
Manufacturer Renesas
File Size 126.34 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Download H5N2508DL Download (PDF)

Key Features

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  • Low.
  • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
  • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A).
  • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A).
  • Avalanche ratings Outline.

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