H5N2508DS Datasheet Silicon N Channel MOS FET High Speed Power Switching

Manufacturer: Renesas

Overview: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.

Download the H5N2508DS datasheet PDF. This datasheet also includes the H5N2508DL variant, as both parts are published together in a single manufacturer document.

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H5N2508DS silicon n channel mos fet high speed power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	H5N2508DS
Manufacturer	Renesas
File Size	126.34 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Download	H5N2508DS Download (PDF)

Key Features

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Low.
Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A).
Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A).
Avalanche ratings Outline.

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