H5N2508DS Datasheet

Manufacturer: Renesas

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H5N2508DS
Datasheet	H5N2508DS H5N2508DL Datasheet (PDF)
File Size	126.34 KB
Manufacturer	Renesas
Description	Silicon N Channel MOS FET High Speed Power Switching

H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005.

Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)
Avalanche ratings

Part Number	Description
H5N2508DL	Silicon N Channel MOS FET High Speed Power Switching
H5N2501LD	Silicon N Channel MOS FET High Speed Power Switching
H5N2501LM	Silicon N Channel MOS FET High Speed Power Switching
H5N2501LS	Silicon N Channel MOS FET High Speed Power Switching
H5N2502CF	Silicon N Channel MOS FET High Speed Power Switching
H5N2503P	Silicon N Channel MOS FET High Speed Power Switching
H5N2504DL	Silicon N Channel MOS FET High Speed Power Switching
H5N2504DS	Silicon N Channel MOS FET High Speed Power Switching
H5N2505DL	Silicon N Channel MOS FET High Speed Power Switching
H5N2505DS	Silicon N Channel MOS FET High Speed Power Switching