H5N2508DS - Silicon N Channel MOS FET High Speed Power Switching

This page provides the datasheet information for the H5N2508DS, a member of the H5N2508DL Silicon N Channel MOS FET High Speed Power Switching family.

Product Overview

Renesas Technology

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Datasheet Details

Part number	H5N2508DS
Manufacturer	Renesas Technology
File Size	126.34 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2508DS Datasheet
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H5N2508DS Product details

Features

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Low.
Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A).
Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A).
Avalanche ratings Outline.

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Published: Nov 20, 2008 |