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H5N2522FN Datasheet

Silicon N Channel MOS FET High Speed Power Switching

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H5N2522FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G1573-0210
Rev.2.10
May 08, 2007
D
1. Gate
2. Drain
3. Source
S
Ratings
250
±30
12
48
12
48
12
9
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 1 of 6


Renesas Electronics Components Datasheet

H5N2522FN Datasheet

Silicon N Channel MOS FET High Speed Power Switching

No Preview Available !

H5N2522FN
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
250
1.5
Notes: 4. Pulse test
Typ
0.13
1300
185
62
24
57
190
69
0.89
93
Max
10
±0.1
4.0
0.17
Unit
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VGS = 10 V
1.35
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 6 A
ns VGS = 10 V
ns RL = 20
ns Rg = 10
V IF = 12 A, VGS = 0
ns IF = 12 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1573-0210 Rev.2.10 May 08, 2007
Page 2 of 6


Part Number H5N2522FN
Description Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Technology
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H5N2522FN Datasheet PDF






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