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H5N2522FN - Silicon N Channel MOS FET High Speed Power Switching

Datasheet Summary

Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching Outline.

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Datasheet Details

Part number H5N2522FN
Manufacturer Renesas Technology
File Size 133.27 KB
Description Silicon N Channel MOS FET High Speed Power Switching
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www.DataSheet4U.com H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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