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H5N2522LS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1667-0100 Rev.1.00 Apr 23, 2008
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H5N2522LS Datasheet
