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H5N2801P Datasheet - Renesas Technology

Silicon N Channel MOS FET High Speed Power Switching

H5N2801P Features

* Low on-resistance

* Low drive current

* High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain cur

H5N2801P Datasheet (142.45 KB)

Preview of H5N2801P PDF

Datasheet Details

Part number:

H5N2801P

Manufacturer:

Renesas ↗ Technology

File Size:

142.45 KB

Description:

Silicon n channel mos fet high speed power switching.

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H5N2801P Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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