H5N2801P - Silicon N Channel MOS FET High Speed Power Switching

Renesas

Key Features

Low on-resistance.
Low drive current.
High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Body-drain diode reverse drain Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 Note3 EAR Rating 280 ±30 60 240 60 35 74.5 150 0.833 150.
55 to +1.

H5N2801P silicon n channel mos fet high speed power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	H5N2801P
Manufacturer	Renesas
File Size	142.45 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2801P Datasheet

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H5N2801P Silicon N Channel MOS FET High Speed Power Switching REJ03G0118-0100Z Rev.1.00 Oct.01.2003 www.DataSheet4U.com Features • Low on-resistance • Low drive current • High speed switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.01.2003, page 1 of 9 H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Body-drain diode reverse drain Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 Note3 EAR Rating 280 ±30 60 240 60 35 74.5 150 0.