H5N2801P
H5N2801P is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
Features
- Low on-resistance
- Low drive current
- High speed switching
Outline
TO-3P
1. Gate 2. Drain (Flange) 3. Source
Rev.1.00, Oct.01.2003, page 1 of 9
Absolute Maximum Rating
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current
.. Body-drain diode reverse drain
Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3
Note3 EAR
Rating 280 ±30 60 240 60 35 74.5 150 0.833 150
- 55 to +150
Unit V V A A A A m J W °C /W °C °C current Avalanche current Avalanche energy Channel dissipation
Pch
Note2
Channel to case thermal impedance θch-c Channel temperature Storage temperature Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Oct.01.2003, page 2 of 9
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current
..
Symbol Min V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF 280
- - 3.0 27
- -
- -
- -
- -
- -
- -
- -
Typ
- -
- - 45 0.034 5400 770 100 70 300 250 210 148 30 73 1.10 270...
