H5N2001LD Datasheet | Renesas

Features - Low on-resistance - Low leakage current .. - High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H5N2001LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G H5N2001LM Rev.6.00 Jul 14, 2006 page 1 of 7 H5N2001LD, H5N2001LS, H5N2001LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance .. Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Ratings 200 ±30 20 80 20 80 20 75 1.67 150 - 55 to +150 Unit V V A A A A A W °C/W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body to drain diode forward voltage Body to drain diode reverse recovery time Body to drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 200 - - 3.0 - 8 - - - - - - - - - - - - - Typ - - - - 0.100 14 1350 180 55 35 70 85 20 44 8 22 0.9 140 0.7 Max - ±0.1 1 4.5 0.125 - - - - - - - -...