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H5N2003P - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Low on-resistance.
  • Low leakage current www. DataSheet4U. com.
  • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Note.

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Datasheet Details

Part number H5N2003P
Manufacturer Renesas
File Size 119.38 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2003P Datasheet

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H5N2003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0235-0100Z Rev.1.00 Apr.09.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Pch Note2 θch-c Tch Tstg Note3 Ratings 200 ±30 60 240 60 240 40 150 0.