H5N2004DL Description
H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005.
H5N2004DL Key Features
- Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
- High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
- Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)
- Avalanche ratings