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H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching

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Renesas Technology

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H5N2004DL Silicon N Channel MOS FET High Speed Power Switching by Renesas Technology - Datasheet Preview — Datasheet preview – H5N2004DL

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Part number	H5N2004DL
Manufacturer	Renesas Technology
File Size	126.44 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2004DL Datasheet
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Low.
Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V).
High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A).
Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A).
Avalanche ratings Outline.

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Published: Nov 20, 2008 |