H5N2004DS Datasheet Silicon N Channel Mos Fet High Speed Power Switching

Manufacturer: Renesas

Overview: H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H5N2004DS
Manufacturer	Renesas
File Size	126.44 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2004DS H5N2004DL Datasheet (PDF)

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Low.
Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V).
High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A).
Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A).
Avalanche ratings Outline.

Part Number	Description
H5N2004DL	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LD	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LM	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LS	Silicon N Channel MOS FET High Speed Power Switching
H5N2003P	Silicon N Channel MOS FET High Speed Power Switching
H5N2007FN	Silicon N Channel MOS FET High Speed Power Switching
H5N2008P	Silicon N Channel MOS FET High Speed Power Switching
H5N2305PF	Silicon N Channel MOSFET High Speed Power Switching
H5N2306PF	Silicon N Channel MOS FET High Speed Power Switching
H5N2501LD	Silicon N Channel MOS FET High Speed Power Switching