H5N5012P - Silicon N Channel MOS FET High Speed Power Switching

Name: H5N5012P
SKU: H5N5012P-628951

Renesas Technology

The H5N5012P by Renesas Technology is a Silicon N Channel MOS FET High Speed Power Switching. Below is the official datasheet preview.

Datasheet Details

Part number	H5N5012P
Manufacturer	Renesas Technology
File Size	85.75 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N5012P_RenesasTechnology.pdf
Additional preview pages of the H5N5012P datasheet.

Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching.
Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.

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Published: Nov 20, 2008 |