H5N5012P - Silicon N Channel MOS FET High Speed Power Switching

Renesas

Key Features

Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching.
Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.

H5N5012P silicon n channel mos fet high speed power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	H5N5012P
Manufacturer	Renesas
File Size	85.75 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N5012P Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
H5N5015P	Silicon N-Channel MOSFET	Hitachi
H5N5015P	Silicon N-Channel MOSFET	Renesas
H5N5016PL-E0-E	MOSFET	Renesas
H5N5001FM	Silicon N-Channel MOSFET	Hitachi
H5N5004PL	Silicon N-Channel MOSFET	Hitachi

Other Datasheets by Renesas

Part Number	Description
H5N5016PL	Silicon N-Channel MOSFET
H5N1503P	Silicon N Channel MOS FET High Speed Power Switching
H5N1506P	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LD	Silicon N Channel MOS FET High Speed Power Switching
H5N2001LM	Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Built-in fast recovery diode Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAPNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 500 ±30 25 100 25 7 150 0.