H5N5012P Datasheet | Renesas

Features - Low on-resistance - Low leakage current .. - High speed switching - Built-in fast recovery diode Outline TO-3P 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAPNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 500 ±30 25 100 25 7 150 0.833 150 - 55 to +150 Unit V V A A A A W °C/W °C °C Rev.2.00, Jun.17.2004, page 1 of 3 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance .. Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 500 - - 1.5 13 - - - - - - - - - - - - - - Typ - - - - 23 0.180 3600 385 95 40 100 270 150 145 20 70 1.0 170 1.0 Max - 10 ±0.1 4.0 - 0.225 - - - - - - - - - - 1.5 - - Unit V µA µA V S Ω p F p F p F ns ns ns ns n C n C n C V ns µC Test conditions ID = 10 m A, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 m A ID = 12.5 A, VDS = 10 V Note4 ID = 12.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 12.5 A VGS = 10 V RL = 20 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 25 A IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0 di F/dt = 100...