• Part: H7N0312LD
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 137.70 KB
Download H7N0312LD Datasheet PDF
Renesas
H7N0312LD
H7N0312LD is Silicon N-Channel MOSFET manufactured by Renesas.
Features .. R - Low on-resistance DS (on) = 2.6 mΩ typ. - Low drive current - 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N0312LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) H7N0312LM Rev.3.00 Apr 07, 2006 page 1 of 7 H7N0312LD, H7N0312LS, H7N0312LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature .. Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 85 340 85 125 1.0 150 - 55 to +150 Unit V V A A A W °C/W °C °C Pch θ ch-c Tch Tstg Note 2 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 ±20 - - 1.0 - - 75 - - - - - - - - - -...