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H7N0607DL - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 26 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche ener.

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Datasheet Details

Part number H7N0607DL
Manufacturer Renesas
File Size 118.02 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0607DL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3.