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H7N1002AB - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Low on-resistance RDS(on) = 8 mΩ typ.
  • Low drive current.
  • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150.
  • 55 to +150 Unit V V.

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Datasheet Details

Part number H7N1002AB
Manufacturer Renesas
File Size 231.02 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7N1002AB Datasheet

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H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1.