Part number:
H7N1002AB
Manufacturer:
Renesas ↗ Technology
File Size:
231.02 KB
Description:
Silicon n channel mos fet high speed power switching.
H7N1002AB Datasheet (231.02 KB)
* Low on-resistance RDS(on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
H7N1002AB Datasheet (231.02 KB)
H7N1002AB
Renesas ↗ Technology
231.02 KB
Silicon n channel mos fet high speed power switching.
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