H7N1004AB - Silicon N Channel MOS FET High Speed Power Switching

Renesas

Key Features

Low on-resistance RDS (on) =25 mΩ typ. www. DataSheet4U. com.
Low drive current.
Available for 4.5 V gate drive Outline.

H7N1004AB silicon n channel mos fet high speed power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	H7N1004AB
Manufacturer	Renesas
File Size	144.77 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H7N1004AB Datasheet

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H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.