Datasheet4U Logo Datasheet4U.com

H7N1004FM Datasheet Silicon N Channel Mos Fet High Speed Power Switching

Manufacturer: Renesas

Overview: H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 ..

Key Features

  • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.5 25.

More Datasheets from Renesas

Part Number Description
H7N1004FN Silicon N Channel MOS FET High Speed Power Switching
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching
H7N1004DL Silicon N Channel MOS FET High Speed Power Switching
H7N1004DS Silicon N Channel MOS FET High Speed Power Switching
H7N1004LD (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
H7N1004LM (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
H7N1004LS (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
H7N1002AB Silicon N Channel MOS FET High Speed Power Switching
H7N1002LD Silicon N Channel MOS FET High Speed Power Switching
H7N1002LM Silicon N Channel MOS FET High Speed Power Switching

H7N1004FM Distributor