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H7N1004DS - Silicon N Channel MOS FET High Speed Power Switching

Download the H7N1004DS datasheet PDF. This datasheet also covers the H7N1004DL variant, as both devices belong to the same silicon n channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) = 25 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • Available for 4.5 V gate drive Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N1004DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7N1004DS
Manufacturer Renesas
File Size 152.25 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7N1004DS Datasheet

📁 Similar Datasheet

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H7N0307AB Silicon N-Channel MOSFET Renesas

Other Datasheets by Renesas

Part Number Description
H7N1004DL Silicon N Channel MOS FET High Speed Power Switching
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching
H7N1004FM Silicon N Channel MOS FET High Speed Power Switching
H7N1004FN Silicon N Channel MOS FET High Speed Power Switching
H7N1004LD (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) = 25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S)) D 1 2 3 G 1. Gate 2. Drain 3. Source H7N0607DS 1 2 3 S H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.