H7N1005DS
Features
- Low on-resistance RDS (on) = 85 mΩ typ.
- Low drive current
- Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
D 4
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID ID (pulse) Note 1
IDR IAP Note 2 EAR Note 2 Pch Note 3
Tch
Tstg
Value 100 ±20 12 30 12
8 6.4 20 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A A m J W °C °C
REJ03G1736-0100 Rev.1.00 Sep 19, 2008 Page 1 of 8
H7N1005DL, H7N1005DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max...
