H7N1005DS Description
H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching.
H7N1005DS Key Features
- Low on-resistance RDS (on) = 85 mΩ typ
- Low drive current
- Capable of 4.5 V gate drive
H7N1005DS is Silicon N-Channel MOS FET manufactured by Renesas .
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
H7N1005LD | Silicon N Channel MOS FET High Speed Power Switching |
Renesas |
H7N1005LM | Silicon N Channel MOS FET High Speed Power Switching |
Renesas |
H7N1005LS | Silicon N Channel MOS FET High Speed Power Switching |
H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching.