• Part: H7N1005LD
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 161.26 KB
Download H7N1005LD Datasheet PDF
Renesas
H7N1005LD
Features - Low on-resistance RDS (on) = 85 mΩ typ. .. - Low drive current - Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H7N1005LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G H7N1005LM Rev.2.00 Oct 16, 2006 page 1 of 8 H7N1005LD, H7N1005LS, H7N1005LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature .. Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 100 ±20 15 30 30 8 6.4 30 150 - 55 to +150 Unit V V A A A A m J W °C...