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H7N1005LD - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Low on-resistance RDS (on) = 85 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • Capable of 4.5 V gate drive Outline.

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Datasheet Details

Part number H7N1005LD
Manufacturer Renesas
File Size 161.26 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7N1005LD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 85 mΩ typ. www.DataSheet4U.com • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H7N1005LD H7N1005LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N1005LM Rev.2.